Semiconductor industry switches to hafnium-based transistors
Plagued by quantum tunneling of charge carriers through gate insulators, chip manufacturers are shifting to high-dielectric-constant materials that maintain sufficient capacitance and reduce power leaks.
Some
day semiconductor chip components may cease to shrink; that day is not now.
At the December 2007 International
Electron Devices Meeting, Intel Corp presented a paper, written by 50 of its scientists and engineers,
that unveiled details of the company's 45-nm technology. The new technology features more efficient
materials that replace, for the first time in almost 40 years, polycrystalline silicon gate electrodes
and silicon oxide–based insulators—core components of the transistor, the on/off
switch of an integrated circuit.
The move was a response
to a line in the sand drawn by fundamental physical limitations. As key circuit features shrank
to single-digit nanometer dimensions, quantum tunneling of charge carriers through thinning
silicon-based insulators, also called gate dielectrics, threatened the continuation of Moore's
law—the doubling of transistor density approximately every two years. The semiconductor
industry could no longer ignore the power loss and excessive heating that resulted from the leakage
currents and was forced to seek an alternative material.
Several semiconductor
companies—including Texas Instruments Inc and IBM and its partners—have committed
to producing chips that use high-dielectric- constant hafnium oxide–based insulators
and metal-gate electrodes, called "high-k metal-gate" technology (k represents
the Greek letter kappa, which represents the dielectric constant), by 2008 or 2009. Intel's 45-nm
product, launched last November, uses the new hafnium-based technology.
Industry road-map target
The hunt for high-k dielectrics
began when the industry could no longer shrink the gate dielectric beyond the tunneling limit,
says Thomas Theis, director of physical sciences at the IBM Thomas J. Watson Research Center. Since
1992 the semiconductor industry has been urged by what is now the International Technology
Roadmap for Semiconductors to shrink various features on an integrated circuit in an effort
to sustain Moore's law. Each successive shrinking or scaling is known as a technology generation
or node. The road map, normally updated yearly and commissioned by industry associations from
the five leading chip-manufacturing regions in the world—Japan, South Korea, Europe,
Taiwan, and the US— gives a 15-year outlook of the R&D needs of the semiconductor industry.
In the mid-1990s, however,
the industry became concerned that as the transistor components shrank, too many electrons would
tunnel through silicon dioxide layers. High capacitance in a transistor drives performance and
is proportional to the dielectric constant but inversely proportional to the insulator's thickness.
Near the turn of the 21st century, the thinning of the silicon dioxide insulator, which has a modest
dielectric constant of about 3.9, started to become significant below thicknesses of 2 nm. As the
thickness approached 1 nm, the leakage current approached 100 A/cm2—an unacceptable
rate that produces power drain and overheating especially for low-power devices such as cell phones
and laptops.
Laying the groundwork
Attention to the need for high-k
gate insulators was widely disseminated after the 1997 road map, says Carlton Osburn, a researcher
at North Carolina State University. That report initiated extensive precompetitive and collaborative
research to find the best high-k materials and the processes for incorporating them. In
the US in 1997, SEMATECH, a nonprofit industry research consortium, and the Semiconductor Research
Corp (SRC), an industry consortium sponsoring research at more than 100 universities worldwide,
jointly funded a research center in 1997 based at NCSU to tackle the high-k challenge. Researchers
from 14 universities affiliated with the center evaluated hundreds of combinations of gate dielectrics
and gate electrode materials, says Osburn, who directed the NCSU center. He added that the center
played a pivotal role in identifying the hafnium oxide family of materials as the best candidates
for the gate insulator.
In Europe, the Belgian
Interuniversity Microelectronics Center, or IMEC, whose members include academic and industrial
institutions around the world, conducted similar research. "University collaborations are
used [by industry] to lay the groundwork and build the knowledge base upon which they can implement
what they plan to do," says Michael Polcari, president and CEO of SEMATECH. In addition to the material
breakthroughs, Raj Jammy, a technical director at SEMATECH, also credits atomic layer deposition
as critical to high-k metal-gate integration.
But even before the precompetitive
work, high-k research activity was being done at companies like Bell Labs, IBM, and Intel
"in secret," says Steven Hillenius, vice president of research operations at SRC, "but no one [company]
had it all." Intel's internal research began around 1996 and continued until about 2003, says Michael
Mayberry, who was involved in Intel's early high-k explorations and is vice president
of the company's components research group. "High-k metal-gate transistors are just
the latest example of the types of breakthroughs that our industry needs to keep Moore's law going,"
says Mark Bohr, a senior fellow with Intel's logic technology development group. "And [to] anyone
who was suggesting that Moore's law has run out of steam, I would say this is evidence to the contrary."
For the moment, device
manufacturers are keeping the actual recipes for their high-k and metal-gate materials
under wraps. Osburn says that the gate insulator is likely a derivative of hafnium oxide with dielectric
constant six to eight times that of SiO2. Hafnium oxide "is refractory enough to withstand
the demands of high-temperature silicon processing," says Supratik Guha, a senior manager at
IBM and a member of its original high-k research group. For the metal-gate electrode, many
metal alloy solutions have been explored, including tantalum carbide, lanthanum, and aluminum-based
materials.
Robert Doering, a senior
fellow and technology strategist for Texas Instruments, says that high-k technology
will not meet the requirements for high-volume, low-power devices until the 32-nm generation.
High-performance device customers, however, are still assessing their need for high-k
at 45 nm, he adds. The Japanese chip maker NEC Corp has put high-k technology in application-specific
integrated circuits at the 55-nm generation. An IBM-led alliance, whose members have not yet been
disclosed, plans to introduce high-k metal-gate technology for the 32-nm generation.
The gate debate
"High-k was never thought to
be commercializable because it had defects that trapped charge and caused the parameters of the
transistor to shift over time," says John Suehle, who leads semiconductor device reliability
and characterization studies at NIST in Gaithersburg, Maryland. Choosing the appropriate gate-electrode
material presented additional constraints. "The whole history of searching for both high-k
gate dielectrics and metal gates is really very long," says Doering, adding that aluminum metal
gates were being used in some of the early metal-oxide semiconductor transistors in the 1960s.
Polysilicon, though not
as conductive as most metals, became the industry choice for the gate electrode because it was easier
to fabricate and integrate, it interfaced better with SiO2, and it could be easily
doped for optimum threshold voltage—the voltage at which electrons or holes begin to flow
from the source to the drain. Yet the polysilicon gate electrode brought about depletion of carriers
at the electrode–insulator interface of thin insulators, the so-called poly-depletion
effect. Consequently, the semiconductor industry is returning to metal-gate electrodes, but
with new metals, to interface with the hafnium materials (see the figure on page 25).
Since conventional transistor
processing includes a high-temperature annealing step that could lead to diffusion of the metal
into the gate dielectric material, Intel chose to go with a "high-k-first, gate-last process,"
says Intel's Bohr, referring to the order of deposition. The company is also opting for two different
metal-gate materials to provide better control of threshold voltages. The nontraditional gate-last
is viewed by Intel's competitors as potentially more expensive than the current gate-first process,
since it involves adding and removing a sacrificial layer between the dielectric and the metal
gate. Bohr says that the cost increase to produce the 45-nm technology high-k wafers is
only about 3%, with the performance boost and power reduction providing a good return on investment.
IBM is going with a gate-first
process and will be using only one type of electrode material, whereas Texas Instruments plans
to go with gate-first but has also developed a gate-last process, says Doering. "It would be difficult
to know which process is best until they all ramp up to volume manufacturing," says Hillenius, adding
that gate-first and gate-last may end up being equivalent processes.
As scaling continues,
Doering says, the industry will continue to search for newer compatible materials with even higher
dielectric constants than the hafnium oxides. Meanwhile, university and industry researchers
are simultaneously looking for solutions beyond silicon as industry forecasters predict the
inevitable demise of Moore's law.
"Stephen Hawking came
through Silicon Valley a few years ago," recalls Gordon Moore, Intel's cofounder and author of
Moore's law. According to Moore, someone at a presentation given by Hawking asked the theoretical
physicist what the limitations to the law would be. Hawking replied, "the speed of light and the
atomic nature of matter."
"That turns out to be pretty
much the case," Moore says.
Featured Jobs
